to - 220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors KTB1366 transistor (pnp) features z low collector saturation voltage z complementary to ktd2058 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-50ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -7 v collector cut-off current i cbo v cb =-60v,i e =0 -100 a emitter cut-off current i ebo v eb =-7v,i c =0 -100 a h fe(1) v ce =-5v, i c =-0.5a 60 200 dc current gain h fe(2) v ce =-5v, i c =-3a 20 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.2a -1 v base-emitter voltage v be v ce =-5v, i c =-0.5a -1 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 150 pf transition frequency f t v ce =-5v,i c =-0.5a 9 mhz classification of h fe (1) rank o y range 60-120 100-200 symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current -3 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 63 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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